Improving the Performance of Mosfet Field Effect Transistors Using SPWM Technology

Electronic applications based on MOSFET technology have witnessed widespread adoption, particularly in the field of voltage regulators that convert direct current to alternating current. These systems rely on feedback loops that monitor transistor performance and adjust the width of the control pulse applied to the transistor gate to improve thermal stability and ensure operational efficiency. In this research, we present an innovative control mechanism based on pulse width modulation by measuring the load current and transistor temperature. This allows the system to adapt to different operating conditions, thereby improving performance efficiency. To achieve this, the sinusoidal pulse width modulation (SPWM) technique will be adopted, which offers additional advantages over the traditional PWM modulation method. The research will also examine the signal distortion coefficient resulting from applying both techniques to transistors, analyzing the effect of pulses on signal quality and the extent of performance improvement when using SPWM instead of PWM. In addition, a variable frequency half-bridge converter will be designed and implemented to test the two technologies in practice and compare the results obtained from each, providing a comprehensive evaluation of the effectiveness of the new system in improving transistor performance under different loading conditions.